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SQ4850EY
www.vishay.com
TYPICAL CHARACTERISTICS (T A = 25 °C, unless otherwise noted)
Vishay Siliconix
2.5
I D = 6 A
100
2.1
1.7
V GS = 10 V
10
1
T J = 150 °C
1.3
0.9
0.1
0.01
T J = 25 °C
0.5
- 50
- 25
0
25
50
75
100
125
150
175
0.001
0.0
0.2
0.4 0.6 0. 8
1.0
1.2
0.15
T J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.6
V SD - Source-to-Drain V oltage ( V )
Source Drain Diode Forward Voltage
0.3
0.12
0
0.09
- 0.3
I D = 5 mA
0.06
- 0.6
0.03
0.00
T J = 125 °C
T J = 25 °C
- 0.9
- 1.2
I D = 250 μA
0
1
2 3 4 5 6 7
8
9
10
- 50
- 25
0
25
50
75
100
125
150
175
V GS - Gate-to-Source V oltage ( V )
On-Resistance vs. Gate-to-Source Voltage
75
I D = 1 mA
72
69
66
63
60
T J - Temperature (°C)
Threshold Voltage
- 50
- 25
0
25
50
75
100
125
150
175
T J - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S12-2200-Rev. E, 24-Sep-12
4
Document Number: 68878
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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